(1)

S. Kodama, Y. Furumura, K. Kinoshita, H. Kato and S. Yoda, "Single crystalline bulk growth of In_0.3Ga_0.7As on GaAs seed using the multi-component zone melting method", J. Cryst. Growth 208 (2000) 165-170.

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K. Hashio, M. Tatsumi, H. Kato and K. Kinoshita, "Directional solidification of In_xGa_1-xAs", J. Cryst. Growth 210 (2000) 471-477.

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Y. Hiraoka, K. Ikegami, T. Maekawa, S. Matsumoto, S. Yoda and K. Kinoshita, "Numerical analysis of crystal growth of an InAs-GaAs binary semiconductor under microgravity conditions", J. Physics D 33 (2000) 1-11.

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H. Kato, M. Iwai, Y. Muramatsu, K.Kinoshita and S. Yoda, "Single crystal growth of compositionally graded In_xGa_1-xAs", Mater. Sci. Eng. B75 (2000) 143-148.

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T. Maekawa and S. Matsumoto, "Numerical modeling of cryatal growth of binary semiconductors, chapter 4, modeling of transport phenomena in crystal growth", WIT press (Southampton, UK, 2000).

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M. Tatsumi, K. Hashio, H. Kato and K. Kinoshita, "Directional solidification of In_xGa_1-xAs", Japan-Canada Microgravity Workshop (Canada, 2000).

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S. Kodama, T. Nakamura, K. Kinoshita, H. Kato and S. Yoda, "In_xGa_1-xAs seed crystal growth", Japan-Canada Microgravity Workshop (Canada, 2000).

(3)

S. Matsumoto, Y. Hiraoka, K. Ikegami, T. Maekawa, S. Yoda and K. Kinoshita, "Simulation of In_xGa_1-xAs crystal growth", Japan-Canada Microgravity Workshop (Canada, 2000).

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K. Kinoshita, "Effect of microgravity environment on growth-related properties of semiconductor alloys (InGaAs)", Japan-Canada Microgravity Workshop (Canada, 2000).

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M. Tatsumi, K. Hashio, H. Kato and K. Kinoshita, "Directional solidification of In_xGa_1-xAs by the vertical Bridgman method", Spacebound 2000 (Canada, 2000).

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S. Kodama, T. Nakamura, K. Kinoshita, H. Kato and S. Yoda, "In_0.3Ga_0.7As seed crystal preparation for microgravity experiments aboard the international space station", Spacebound 2000 (Canada, 2000).

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S. Matsumoto, Y. Hiraoka, T. Maekawa, H. Kato, S. Yoda and K. Kinoshita, "Numerical study of directional solidification of InAs-GaAs binary semiconductor", Spacebound 2000 (Canada, 2000).

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K. Kinoshita, H. Kato, S. Matsumoto, M. Iwai, T. Tsuru, Y. Muramatsu and S. Yoda, "Homogeneous In_0.3Ga_0.7As crystal growth by the graded solute concentration method", Spacebound 2000 (Canada, 2000).

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Y. Hiraoka, K. Ikegami, T. Maekawa, S. Matsumoto, S. Yoda and K. Kinoshita, "Crystal growth of a binary semiconductor under microgravity conditions", 33nd COSPAR scientific assembly (Warsaw, Poland, 2000).

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S. Adachi, M. Kaneko, K. Kinoshita, H. Kato, S. Yoda and K. Uematsu, "Numerical study on melt growth of InAs semiconductor under microgravity and on the earth", 12th American conference on crystal growth and epitaxy (2000) session:4B.

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S. Kodama, T. Nakamura, K. Kinoshita, H. Kato and S. Yoda, "Bulk growth of single crystalline In_0.3Ga_0.7As on GaAs seed by the multi-component zone melting method using in process synthesized InGaAs source", The 1st Asian Conference on Crystal Growth and Crystal Technology (Sendai, Japan, 2000) T-P-15.

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P. Verma, M. Yamada, M. Tatsumi, H. Kato and K. Kinoshita, "Micro-Raman analysis of molar fraction in polycrystalline In_xGa_1-xAs material", The 1st Asian Conference on Crystal Growth and Crystal Technology (Sendai, Japan, 2000) T-P-16.

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K. Kinosihita, H. Kato, M. Iwai, T. Tsuru, Y. Muramatsu and S. Yoda, "Homogeneous In_0.3Ga_0.7As crystal growth by the concentration gradient zone melting method", The 1st Asian Conference on Crystal Growth and Crystal Technology (Sendai, Japan, 2000) T-B-9.

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M. Tatsumi, K. Hashio, H. Kato and K. Kinoshita, "Directional solidification of In_xGa_1-xAs by the vertical Bridgman method", The 1st Asian Conference on Crystal Growth and Crystal Technology (Sendai, Japan, 2000) T-P-14.

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T. Maekawa, S. Matsumoto, Y. Hiraoka and K. Ikegami, "Numerical modeling and analysis of crystal growth of binary compound semiconductor", The 1st Asian Conference on Crystal Growth and Crystal Technology (Sendai, Japan, 2000) T-D-10.

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K. Kinoshita, H. Kato, M. Iwai, T. Tsuru, Y. Muramatsu and S. Yoda, "Homogeneous In_0.3Ga_0.7As crystal growth", First international symposium on microgravity research & applications in physical sciences and biotechnology (Sep. 2000).

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Y. Hiraoka, K. Ikegami, T. Maekawa, S. Matsumoto, S. Yoda and K. Kinoshita, "Crystal growth of a binary semiconductor under microgravity conditions", First international symposium on microgravity research & applications in physical sciences and biotechnology (Sep. 2000).

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T. Tsuru, M. Iwai, Y. Muramatsu, K. Kinoshita and S. Yoda, "Growth of homogeneous In_xGa_1-xAs crystals by the concentration gradient partial melting method", 61st. Annual Meeting of Jpn. Soc. Appl. Phys. (2000.9) 3p-Z-18.

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H. Nakamura, Y. Hanaue, H. Kato, K. Kinoshita and S. Yoda, 61st. Annual Meeting of Jpn. Soc. Appl. Phys. (2000.9) 3p-Z-17.

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Y. Hanaue, K. Kinoshita, H. Nakamura, S. Adachi, S. Matsumoto, S. Yoda, M. Iwai, T. Tsuru and Y. Muramatsu, "Homogeneous In_0.3Ga_0.7As single crystal growth by the concentration gradient partial melting method", 16th Annual Meeting of Jpn. Soc. Microgravity Appl., (2000.10) B-104.

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S. Adachi, Y. Hanaue, S. Matsumoto, H. Nakamura, S. Yoda and K. Kinoshita, "Numerical study on interfacial shape control for single crystal growth", 16th Annual Meeting of Jpn. Soc. Microgravity Appl., (2000.10) B-107.

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H. Nakamura, Y. Hanaue, K. Kinoshita and S. Yoda, "Numerical analysis of solidification process for A-B mixed crystal with constant composition", 48th Extended Meeting of Jpn. Soc. Appl. Phys. and Related Socs., (2001.3) 30p-W-14.