Publication List

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Publications of the Semiconductor Crystal Growth Team (1999.4 - 2000. 3)

1. Papers

(1)	T. Nagashima, H. Katoh, Y. Saita, T. Satoh and K. Kinoshita, "Wettability and surface tension of molten InGaAs", J. Jpn. Soc. Microgravity Appl. 16, No.4 (1999) 295-299.
(2)	S. Matsumoto and T. Maekawa, "Velocity, temperature and concentration fluctuations induced in a binary semiconductor solution by g-jitter", J. Jpn. Soc. Microgravity Appl. 16, No.4 (1999) 255-262.
(3)	K. Kinoshita, H. Kato, S. Matsumoto and S. Yoda, "Growth of homogeneous In_1-xGa_xSb crystals by the graded solute concentration method", J. Cryst. Growth 216 (2000) 37-43.
(4)	K. Kinoshita, H. Kato, S. Matsumoto, S. Yoda, J. Yu, M. Natsuisaka, T. Masaki, N. Koshikawa, Y. Nakamura, T Nakamura, A. Ogiso, S. Amano, K. Goto, Y. Arai, T. Fukazawa, M. Kaneko and T. Imai, "InAs-GaAs interdiffusion measurements", J. Jpn. Soc. Microgravity Appl. 17, No. 2 (2000) 57-63.
(5)	S. Matsumoto, T. Maekawa, H. Kato, S. Yoda and K. Kinoshita, "Crystal growth of a binary semiconductor of uniform composition", Adv. Space Res. 24, No. 10 (1999) 1241-1244.
(6)	H. Kato, K. Kinoshita, S. Matsumoto, J. Yu, M. Natsuisaka, S. Yoda, T. Masaki, N. Koshikawa, H. Nakamura, T. Nakamura, A. Ogiso, S. Amano, K. Goto, Y. Arai, T. Fukazawa and M. Kaneko, "Measurements of InAs-GaAs mutual diffusion coefficients", Proc. 20th Jpn. Symp. Thermophysical Properties (1999) 300-303.
(7)	S. Matsumoto, Y. Hiraoka, T. Maekawa, H. Kato, S. Yoda, K. Kinoshita, "Numerical analysis of InGaAs crystal growth of a uniform composition under microgravity conditions", Proc. SPIE vol. 3792 (Material research in low gravity II) (1999) 169-176.

2. Oral Presentations

2.1 International Conferences

(1)	H. Kato, M. Iwai, Y. Muramatsu, K.Kinoshita and S. Yoda, "Single crystal growth of compositionally graded In_xGa_1-xAs", IUMRS-ICAM '99 (1999).
(2)	S. Matsumoto, Y. Hiraoka, T. Maekawa, H. Kato, S. Yoda and K. Kinoshita, "Numerical analysis of InGaAs crystal growth of a uniform composition under microgravity conditions", SPIE's 44th annual meeting and exhibition (1999).

2.2 Domestic Conferences

(1)	Y. Hiraoka, T. Maekawa, Matsumoto, H. Kato, S. Yoda and K. Kinoshita, "Numerical analysis of crystal growth of compound semiconductor InAs-GaAs under microgravity conditions", 36th Annual Symposium of Jpn Soc. Heat Conduction (1999. 5) B331.
(2)	K. Kinoshita, H. Kato, S. Matsumoto and S. Yoda, "Growth of homogeneous In_0.3Ga_0.7As crystals by solute concentration method", 60th. Annual Meeting of Jpn. Soc. Appl. Phys. (1999.9).
(3)	M. Iwai, Y. Muramatsu, H. Kato, S. Yoda and K. Kinoshita, "Effects of temperature gradient during the crystal growth of InGaAs", 60th. Annual Meeting of Jpn. Soc. Appl. Phys. (1999.9).
(4)	Y. Hiraoka, K. Ikegami, Matsumoto and T. Maekawa, "Growth of homogeneous InxGa1-xAs crystals by the graded solute concentration method", 60th. Annual Meeting of Jpn. Soc. Appl. Phys. (1999.9).
(5)	K. Kinoshita, H. Kato, S. Matsumoto and S. Yoda, "Growth of homogeneous In_xGa_1-xAs crystals by the graded solute concentration method", 60th. Annual Meeting of Jpn. Soc. Appl. Phys. (1999.9).
(6)	H. Kato, K. Kinoshita, S. Matsumoto, J. Yu, M. Natsuisaka, S. Yoda, T. Masaki, N. Koshikawa, H. Nakamura, T. Nakamura, A. Ogiso, S. Amano, K. Goto, Y. Arai, T. Fukazawa and M. Kaneko, "Measurements of InAs-GaAs mutual diffusion coefficients", Proc. 20th Jpn. Symp. Thermophysical Properties (Tokyo, 1999) 300-303.
(7)	K. Kinoshita, H. Kato, S. Matsumoto and S. Yoda, "Growth of homogeneous In_xGa_1-xAs crystals by the graded solute concentration method - preliminary experiments on the ground -", J. Jpn. Soc. Microgravity. Appl., 16, supplement (1999) 36.
(8)	Y. Hiraoka, T. Maekawa, Matsumoto, H. Kato, K. Kinoshita and S. Yoda, "Growth of homogeneous In_xGa_1-xAs crystals by the zone melting graded solute concentration method", JSME 12th Computational Mechanics Conference (1999. 11).
(9)	P. Verma, M. Yamada, M. Tatsumi, H. Kato, M. Iwai, K. Kinoshita, "Determination of spatial variation of molar fraction in In_1-xGa_xAs bulk crystal using micro-Raman scattering", 47th Extended Meeting of Jpn. Soc. Appl. Phys. and Related Socs., (2000.3).
(10)	H. Kato, M. Iwai, T. Tsuru, Y. Muramatsu, S. Yoda and K. Kinoshita, "Effects of temperature gradient during the crystal growth of InGaAs", 47th Extended Meeting of Jpn. Soc. Appl. Phys. and Related Socs., (2000.3).